| PART |
Description |
Maker |
| FGW40N120H |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| FGW35N60H |
Discrete IGBT (High-Speed V series) 600V / 35A
|
Fuji Electric
|
| FGW25N120VD |
Discrete IGBT (High-Speed V series) 1200V / 25A
|
Fuji Electric
|
| SGL160N60UFD SGL160N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 160 A, 600 V, N-CHANNEL IGBT, TO-264AA
Ultrafast IGBT
Discrete, High Performance IGBT with Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4PC60U-P |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC Solder Plate package
|
IRF[International Rectifier]
|
| SGP13N60UFD SGP13N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
Fairchild Semiconductor
|
| SGF40N60UF SGF40N60UFTU |
Discrete, High Performance IGBT
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| SGP23N60UFTU |
Discrete, High Performance IGBT; Package: TO-220; No of Pins: 3; Container: Rail 23 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
